vrf141 VRF141MP 28v, 150w, 175mhz the vrf141 is a gold-metallized silicon n-channel rf power transistor de- signed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 80 v ? 150w with 22db typical gain @ 30mhz, 28v ? 150w with 13db typical gain @ 175mhz, 28v ? excellent stability & low imd ? common source con guration ? available in matched pairs ? 30:1 load vswr capability at speci ed operating conditions ? nitride passivated ? refractory gold metallization ? high voltage replacement for mrf141 ? rohs compliant symbol parameter vrf141(mp) unit v dss drain-source voltage 80 v i d continuous drain current @ t c = 25c 20 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 300 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 80 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 0.9 1.0 i dss zero gate voltage drain current (v ds = 60v, v gs = 0v) 1.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 5.0 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 400 pf c oss output capacitance v ds = 28v 375 c rss reverse transfer capacitance f = 1mhz 50 050-4942 rev d 9-2010 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.60 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed.
vrf141(mp) class a characteristics symbol test conditions min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep 23 db imd (d3) f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep -50 imd (d9-d13) f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep -75 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep 16 20 db g ps f 1 = 175mhz, v dd = 28v, i dq = 250ma, p out = 150w 13 f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 250ma, p out = 150w pep 40 45 % imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep 1 -30 -28 db imd (d11) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep -60 f 1 = 30mhz, f 2 = 30.001mhz, v dd = 28v, i dq = 250ma, p out = 150w pep 30:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4942 rev d 9-2010 1 10 100 110100 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 0 10 20 30 40 50 60 0 5 10 15 20 25 1 10 100 0 10 20 30 40 50 60 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) 4v 5v 6v 7v 8v 9v 10v 13v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) t j = 125c t c = 75c typical performance curves pdmax i dmax
vrf141(mp) 050-4942 rev d 9-2010 ? 50 ? 45 ? 40 ? 35 ? 30 ? 25 ? 20 0 25 50 75 100 125 150 175 200 225 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 -5 10 -4 10 -3 10 -2 10 1.0 0.5 single pulse 0.1 0.3 0.7 0.05 d = 0.9 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 0 1 2 3 4 p out , output power (watts pep) figure 6. imd versus p out imd, intermodulation distortion (db) output power (w pep ) p out , input power (watts pep) figure 7. p in versus p out typical performance curves vdd=28v, idq = 250ma, freq=150mhz vdd=28v, idq = 250ma, freq=30mhz im3 im5 0 50 100 150 200 250 0 5 10 15 20 25 output power (w pep ) p out , input power (watts pep) figure 7. p in versus p out vdd=28v, idq = 250ma, freq=175mhz
vrf141(mp) 175 mhz test circuit 30 mhz test circuit 050-4942 rev d 9-2010
vrf141(mp) 050-4942 rev d 9-2010 a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain m174 package outline .5? soe all dimensions to be .005? dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54 adding mp at the end of p/n speci es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved.
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